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  • Kingston HyperX Genesis 2133 XMP KHX2133C11D3K4/8GX DDR3
  • Kingston HyperX Genesis 2133 XMP KHX2133C11D3K4/8GX DDR3

Kingston HyperX Genesis 2133 XMP KHX2133C11D3K4/8GX DDR3

Cena
40 €
Šifra oglasa: 6380723

Osnovne informacije

Vrsta ponudbe
Prodam
Lokacija
Osrednjeslovenska, Vrhnika, Vrhnika
Stanje
rabljeno

Opis oglasa

Prodam brezhiben komplet ramov
4 x 2Gb = 8Gb ddr3 Kingston HyperX Genesis 2133

Primeren bolj za Intel osnovne plošče (i7, i5, i3) kjer je v uporabi XMP - quad channel (socket 2011)
seveda deluje tudi na AMD ploščah. (gaming)

Deluje odlično, nikoli navit.
Prodam samo v kompletu.

cena: 40 eur

lokacija: Vrhnika
telefon: O64_1OO_7O6

ali po pošti +3eur
način plačila; nakazilo na TRR

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DESCRIPTION
Kingston's KHX2133C11D3K4/8GX is a kit of four 256M x 64-
bit (2GB) DDR3-2133 CL11 SDRAM (Synchronous DRAM)
1Rx8 memory modules, based on eight 256M x 8-bit DDR3
FBGA components per module. Each module kit supports
Intel® XMP (Extreme Memory Profiles). Total kit capacity is
8GB. Each module kit has been tested to run at DDR3-2133 at
a low latency timing of 11-12-11 at 1.65V. The SPDs are
programmed to JEDEC standard latency DDR3-1333 timing of
9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers.
The JEDEC standard electrical and mechanical specifications
are as follows:

XMP TIMING PARAMETERS
• JEDEC: DDR3-1333 CL9-9-9 @1.5V
• XMP Profile #1: D3-2133 CL11-12-11 @1.65V
• XMP Profile #2: D3-1866 CL10-11-10 @1.65V

SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Maximum Operating Power 2.160 W* (per module)
UL Rating 94 V - 0
Operating Temperature 0o
C to 85o
C
Storage Temperature -55o
C to +100o
C
*Power will vary depending on the SDRAM used.
FEATURES
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.18” (30mm) single sided component

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