močnostni tranzistorji Siemens : BDY39 BUY58 BU111 AU105

novi močnostni tranzistorji Siemens : BDY39 BUY58 BU111 AU105
lahko pošljem, a ne za manj kot 10 eur

BDY39 3X (15 eur vsi 3 )
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 25

BUY58 2X (30 eur oba )
Type Designator: BUY58
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN: 10

BU111 3X (vsi 3 15 eur )
Type Designator: BU111
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 5

AU105 2X (12 eur oba )
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 37 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 50